Part I Introduction To Semiconductors
1 Introduction To Crystals And Current Carriers In Semiconductors, The Atomic-Bond Model
- 1.1 Introduction To Crystals
- 1.2 Current Carriers
- 1.3 Basics Of Crystal Growth And Doping Techniques
- Summary
- Problems
- Review Questions
2 The Energy-Band Model
- 2.1 Electrons As Waves
- 2.2 Energy Levels In Atoms And Energy Bands In Crystals
- 2.3 Electrons And Holes As Particles
- 2.4 Population Of Electron States, Concentrations Of Electrons A:"D Holes
3 Drift
- 3.1 Energy Bands With Applied Electric Field
- 3.2 Ohm'S Law, Sheet Resistance, And Conductivity
- 3.3 Carrier Mobility
4 Diffusion
- 4.1 Diffusion-Current Equation
- 4.2 Diffusion Coefficient
- 4.3 Basic Continuity Equation
- 5 Generation And Recombination
- 5.1 Generation And Recombination Mechanisms
- 5.2 General Form Of The Continuity Equation
- 5.3 Generation And Recombination Physics And Shockleyread-Hall (Srh) Theory
Part II Fundamental Device Structures
6 P-N Junction
- 6.1 P-N Junction Principles
- 6.2 DC Model
- 6.3 Capacita CE Of Reverse-Biased P-:-I Junction
- 6.4 Stored-Charge Effects
7 Metal-Semiconductor Contact And MOS Capacitor
- 7.1 Metal-Semiconductor Contact
- 7.2 MOS Capacitor
8 MOSFET
- 8.1 Mosfet Principles
- 8.2 Principal Current-Voltage Characteristics And Equations
- 8.3 Seco:\D-Oroer Effects
- 8.4 Nanoscale Mosfets
- 8.5 Mos-Based Memory Devices
9 BJT
- 9.1 BJT Principles
- 9.2 Principal Current-Voltage Characteristics, Ebere-Moll Model In Spice
- 9.3 Seconddtorder Effects
- 9.4 Heterojunction Bipolar Transistor
Part III Supplementary Topics
10 Physics Of Nanoscale Devices
- 10.1 Single-Carrier Events
- 10.2 Two-Dimensional Transport In Mosfets And Hemts
- 10.3 One-Dimensuional Transport In Nanowires And Carbon Nanotubes
II Device Electronics, Equivalent Circuits A D Spice Parameters
11.L Diodes
- 11.2 MOSFET
- 11.3 BJT
12 Photonic Devices
- 12.1 Light Emitting Diodes (LED)
- 12.2 Photodetectors And Solar Cells
- 12.3 Lasers
13 JFET And MESFET
- 13.1 JFET
- 13.2 MESFET
14 Power Devices
- 14.1 Power Diodes
- 14.2 Power MOSFET
- 14.3 IGBT
- 14.4 Thyristor
15 Negative Resistance Diodes
- 15.1 Amplification AI'D Oscillation By Negative Dynamic Resistance
- 15.2 Gunn Diode
- 15.3 Impatt Diode
- 15.4 Tunnel Diode
16 Integrated-Circuit Technologies
- 16.1 A Diode In IC Technology
- 16.2 Mosfet Technologies
- 16.3 Bipolar IC Technologies
The dimensions of modern semiconductor devices are reduced to the point where classical semiconductor theory, including the concepts of continuous particle concentration and continuous current, becomes questionable. Further questions relate to two-dimensional transport in the most important field-effect devices and one-dimensional transport in nanowires and carbon nanotubes.
Designed for upper-level undergraduate and graduate courses, Principles of Semiconductor Devices, Second Edition, presents the semiconductor-physics and device principles in a way that upgrades classical semiconductor theory and enables proper interpretations of numerous quantum effects in modern devices. The semiconductor theory is directly linked to practical applications, including the links to the SPICE models and parameters that are commonly used during circuit design.
The text is divided into three parts: Part I explains semiconductor physics; Part II presents the principles of operation and modeling of the fundamental junctions and transistors; and Part III provides supplementary topics, including a dedicated chapter on the physics of nanoscale devices, description of the SPICE models and equivalent circuits that are needed for circuit design, introductions to the most important specific devices (photonic devices, JFETs and MESFETs, negative-resistance diodes, and power devices), and an overview of integrated-circuit technologies. The chapters and the sections in each chapter are organized so as to enable instructors to select more rigorous and design-related topics as they see fit.
New to this Edition
- A new chapter on the physics of nanoscale devices.
- A revised chapter on the energy-band model and fully reworked and updated material on crystals to include graphene and carbon nanotubes.
- A revised P-N junction chapter to emphasize the current mechanisms that are relevant to modern devices.
- JFETs and MESFETs in a stand-alone chapter.
- Fifty-seven new problems and eleven new examples.
Key Features
- Comprehensive (solid introduction to semiconductor physics, broad range of devices, SPICE models, overview of technologies).
- Modern (solid link between physics and SPICE models, emphasis on MOS devices, overview of nanoscale phenomena and devices).
About the Author
- Sima Dimitrijev is Professor at the Griffith School of Engineering and Deputy Director of Queensland Micro- and Nanotechnology Centre at Griffith University in Australia. He is the author of Understanding Semiconductor Devices (OUP, 2000) as well as numerous other publications in the areas of MOSFET technology, modeling, and applications.
Book Details
- Hardcover: 640 pages
- Publisher: Oxford University Press, USA; 2 edition (2011)
- Language: English
- ISBN-10: 0195388038
- ISBN-13: 978-0195388039
- Product Dimensions: 9.3 x 7.6 x 1.2 inches
List Price: $129.00